29. C. Xin^, J.X. Zheng^, Y.T Su, S.K. Li, B.K. Zhang, Y.C. Feng, F. Pan*, "Few-layer Tin Sulfide: A new black-phosphorus-analogue 2D material with a sizeable band gap, even quantum confinement effect, and high carrier mobility", J. Phys. Chem. C 2016, 120, 39, 22663-22669.